4-mbit (256k x 16) static ram cy7c1041d cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05472 rev. *c revised march 31, 2006 features ? pin-and function-com patible with cy7c1041b ?high speed ?t aa = 10 ns ? low active power ?i cc = 90 ma @ 10 ns (industrial) ? low cmos standby power ?i sb2 = 10 ma ? 2.0 v data retention ? automatic power-down when deselected ? ttl-compatible inputs and outputs ? easy memory expansion with ce and oe features ? available in lead-free 44-lead (400-mil) molded soj and 44-pin tsop ii packages functional description [1] the cy7c1041d is a high-performance cmos static ram organized as 256k words by 16 bits. writing to the device is accomplished by taking chip enable (ce ) and write enable (we ) inputs low. if byte low enable (ble ) is low, then data from i/o pins (i/o 0 through i/o 7 ), is written into the location specified on the address pins (a 0 through a 17 ). if byte high enable (bhe ) is low, then data from i/o pins (i/o 8 through i/o 15 ) is written into the location specified on the address pins (a 0 through a 17 ). reading from the device is accomplished by taking chip enable (ce ) and output enable (oe ) low while forcing the write enable (we ) high. if byte low enable (ble ) is low, then data from the memory location specified by the address pins will appear on i/o 0 to i/o 7 . if byte high enable (bhe ) is low, then data from memory will appear on i/o 8 to i/o 15 . see the truth table at the back of this data sheet for a complete description of read and write modes. the input/output pins (i/o 0 through i/o 15 ) are placed in a high-impedance state when the device is deselected (ce high), the outputs are disabled (oe high), the bhe and ble are disabled (bhe , ble high), or during a write operation (ce low, and we low). the cy7c1041d is available in a standard 44-pin 400-mil-wide body width soj and 44-pin tsop ii package with center power and ground (revolutionary) pinout. note: 1. for guidelines on sram system design, please refer to the ?sys tem design guidelines? cypress ap plication note, available on t he internet at www.cypress.com. 14 15 logic block diagram a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 column decoder row decoder sense amps input buffer 256k x 16 a 0 a 11 a 13 a 12 a a a 16 a 17 a 9 a 10 i/o 0 ?i/o 7 oe i/o 8 ?i/o 15 ce we ble bhe we 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 35 34 33 37 40 39 38 12 13 41 44 43 42 16 15 29 30 v cc a 5 a 6 a 7 a 8 a 0 a 1 oe v ss a 17 i/o 15 a 2 ce i/o 2 i/o 0 i/o 1 bhe a 3 a 4 18 17 20 19 i/o 3 27 28 25 26 22 21 23 24 v ss i/o 6 i/o 4 i/o 5 i/o 7 a 16 a 15 ble v cc i/o 14 i/o 13 i/o 12 i/o 11 i/o 10 i/o 9 i/o 8 a 14 a 13 a 12 a 11 a 9 a 10 nc pin configurations top view soj / tsopii [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 2 of 9 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ?65 c to +150 c ambient temperature with power applied............................................. ?55 c to +125 c supply voltage on v cc to relative gnd [3] .... ?0.5v to +6.0v dc voltage applied to outputs in high z state [3] .....................................?0.5v to v cc +0.5v dc input voltage [3] ..................................?0.5v to v cc +0.5v current into outputs (low).... ..................................... 20 ma static discharge voltage......... .... ........... .............. ......>2001v (per mil-std-883, method 3015) latch-up current...................................................... >200 ma selection guide -10 (industrial) -12 (automotive) [2] unit maximum access time 10 12 ns maximum operating current 90 95 ma maximum cmos standby current 10 15 ma operating range range ambient temperature v cc speed industrial ?40 c to +85 c5v 0.5 10 ns automotive ?40 c to +125 c 5v 0.5 12 ns electrical characteristics over the operating range parameter description test conditions -10 (industrial) -12 (automotive) min. max. min. max. unit v oh output high voltage v cc = min., i oh = ?4.0 ma v cc = min., i ol = 8.0 ma 2.4 2.4 v v ol output low voltage 0.4 0.4 v v ih input high voltage 2.0 v cc + 0.5 2.0 v cc + 0.5 v v il input low voltage [3] ?0.5 0.8 ?0.5 0.8 v i ix input leakage current gnd < v i < v cc ?1 +1 ?1 +1 a i oz output leakage current gnd < v out < v cc , output disabled ?1 +1 ?1 +1 a i cc v cc operating supply current v cc = max., f = f max = 1/t rc 100 mhz 90 -ma 83 mhz 80 95 ma 66 mhz 70 85 ma 40 mhz 60 75 ma i sb1 automatic ce power-down current ?ttl inputs max. v cc , ce > v ih v in > v ih or v in < v il , f = f max 20 25 ma i sb2 automatic ce power-down current ?cmos inputs max. v cc , ce > v cc ? 0.3v, v in > v cc ? 0.3v, or v in < 0.3v, f = 0 10 15 ma capacitance [4] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = 5.0v 8pf c out i/o capacitance 8 pf notes: 2. automotive product information is preliminary. 3. v il (min.) = ?2.0v and v ih (max) = v cc + 2v for pulse durations of less than 20 ns. 4. tested initially and after any design or process changes that may affect these parameters. [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 3 of 9 thermal resistance [4] parameter description test conditio ns soj package tsop ii package unit ja thermal resistance (junction to ambient) [4] still air, soldered on a 3 4.5 inch, four-layer printed circuit board 57.91 50.66 c/w jc thermal resistance (junction to case) [4] 36.73 17.17 c/w ac test loads and waveforms [5] switching characteristics [6] over the operating range -10 (industrial) -12 (automotive) parameter description min. max. min. max. unit read cycle t power v cc (typical) to the first access [7] 100 100 s t rc read cycle time 10 12 ns t aa address to data valid 10 12 ns t oha data hold from address change 3 3 ns t ace ce low to data valid 10 12 ns t doe oe low to data valid 5 6ns t lzoe oe low to low z 0 0 ns t hzoe oe high to high z [8, 9] 5 6ns t lzce ce low to low z [9] 3 3 ns t hzce ce high to high z [8, 9] 5 6ns t pu ce low to power-up 0 0 ns t pd ce high to power-down 10 12 ns t dbe byte enable to data valid 5 6ns t lzbe byte enable to low z 0 0 ns t hzbe byte disable to high z 5 6ns notes: 5. ac characteristics (except high-z) are tested using the load co nditions shown in figure (a). high-z characteristics are teste d for all speeds using the test load shown in figure (c) 6. test conditions assume signal transition ti me of 3 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3. 0v, and output loading of the specified i ol /i oh and 30-pf load capacitance. 7. t power gives the minimum amount of time that the power supply should be at typical v cc values until the first memory access can be performed. 8. t hzoe , t hzce , t hzbe , and t hzwe are specified with a load capacitance of 5 pf as in part (c) of ac test loads. transition is measured when the outputs enter a high impedance state. 9. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , t hzbe is less than t lzbe, and t hzwe is less than t lzwe for any given device. 90% 10% 3.0v gnd 90% 10% all input pulses 5v output 5 pf including jig and scope (c) 3 ns 3 ns output r1 481 ? r2 255 ? 167 ? equivalent to: venin equivalent 1.73v th * capacitive load consists of all components of the test environment 30 pf* output z = 50 ? 50 ? 1.5v (a) high-z characteristics: (b) 10 ns device [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 4 of 9 write cycle [10, 11] t wc write cycle time 10 12 ns t sce ce low to write end 7 10 ns t aw address set-up to write end 7 10 ns t ha address hold from write end 0 0 ns t sa address set-up to write start 0 0 ns t pwe we pulse width 7 10 ns t sd data set-up to write end 6 7 ns t hd data hold from write end 0 0 ns t lzwe we high to low z [9] 3 3 ns t hzwe we low to high z [8, 9] 5 6ns t bw byte enable to end of write 7 10 ns switching characteristics [6] over the operating range(continued) -10 (industrial) -12 (automotive) parameter description min. max. min. max. unit data retention characteristics over the operating range parameter description conditions [13] min. max. unit v dr v cc for data retention 2.0 v i ccdr data retention current v cc = v dr = 2.0v, ce > v cc ? 0.3v, v in > v cc ? 0.3v or v in < 0.3v ind?l 10 ma i ccdr data retention current auto 15 ma t cdr [4] chip deselect to data retention time 0 ns t r [12] operation recovery time t rc ns data retention waveform switching waveforms read cycle no. 1 [13, 14] notes: 10. the internal write time of the me mory is defined by the overlap of ce low, and we low. ce and we must be low to initiate a write, and the transition of either of these signals can terminate the write. the input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 11. the minimum write cycle time for write cycle no. 3 (we controlled, oe low) is the sum of t hzwe and t sd . 12. full device operation requires linear v cc ramp from v dr to v cc(min.) > 50 s or stable at v cc(min.) > 50 s 13. no input may exceed v cc + 0.5v 14. device is continuously selected. oe , ce , bhe , and/or bhe = v il . 4.5v 4.5v t cdr v dr > 2v data retention mode t r ce v cc previous data valid data valid t rc t aa t oha address data out [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 5 of 9 read cycle no. 2 (oe controlled) [15,16] write cycle no. 1 (ce controlled) [17, 18] notes: 15. we is high for read cycle. 16. address valid prior to or coincident with ce transition low 17. data i/o is high impedance if oe or bhe and/or ble = v ih . 18. if ce goes high simultaneously with we going high, the output remains in a high-impedance state. switching waveforms (continued) 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu high impedance t hzoe t hzbe t pd high oe ce icc isb impedance address data out v cc supply t dbe t lzbe t hzce bhe , ble current t hd t sd t sce t sa t ha t aw t pwe t wc bw datai/o address ce we bhe, ble t [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 6 of 9 write cycle no. 2 (ble or bhe controlled) write cycle no. 3 (we controlled, oe high during write) [16, 17] note: 19. during this period the i/os are in the output state and input signals should not be applied. switching waveforms (continued) t hd t sd t bw t sa t ha t aw t pwe t wc t sce datai/o address bhe ,ble we ce t hd t sd t pwe t sa t ha t aw t sce t wc t hzoe data in valid ce address we data i/o oe note 19 bhe ,ble [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 7 of 9 write cycle no. 4 (we controlled, oe low) truth table ce oe we ble bhe i/o 0 ?i/o 7 i/o 8 ?i/o 15 mode power h x x x x high z high z power down standby (i sb ) l l h l l data out data out read all bits active (i cc ) l l h l h data out high z read lower bits only active (i cc ) l l h h l high z data out read upper bits only active (i cc ) l x l l l data in data in write all bits active (i cc ) l x l l h data in high z write lower bits only active (i cc ) l x l h l high z data in write upper bits only active (i cc ) l h h x x high z high z selected, outputs disabled active (i cc ) ordering information speed (ns) ordering code package diagram package type operating range 10 cy7c1041d-10vxi 51-85082 44-lead (400-mil) molded soj (pb-free) industrial cy7c1041d-10zsxi 51-85087 44-lead tsop type ii (pb-free) 12 cy7c1041d-12vxe 51-85082 44-lead (400-mil) molded soj (pb-free) automotive CY7C1041D-12ZSXE 51-85087 44-lead tsop type ii (pb-free) please contact your local cypress sales representative for availability of these parts. switching waveforms (continued) t hd t sd t sce t ha t aw t pwe t wc t bw data i/o address ce we bhe , ble t sa t lzwe t hzwe note 19 bhe ,ble [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 8 of 9 ? cypress semiconductor corporation, 2006. the information contained herein is subject to change without notice. cypress semic onductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agr eement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. all products and company names mentioned in this docum ent may be the trademarks of their respective holders. package diagrams 44-lead (400-mil) molded soj (51-85082) 51-85082-*b 44-pin tsop ii (51-85087) 51-85087-*a [+] feedback [+] feedback
cy7c1041d document #: 38-05472 rev. *c page 9 of 9 document history page document title: cy7c1041d 4-mbit (256k x 16) static ram document number: 38-05472 rev. ecn no. issue date orig. of change description of change ** 201560 see ecn swi advance datasheet for c9 ipp *a 233729 see ecn rkf 1.ac, dc parameters are modified as per eros (spec #01-2165) 2.pb-free offering in the ?ordering information? *b 351117 see ecn pci changed from advance to preliminary removed 17 and 20 ns speed bin added footnote # 4 redefined i cc values for com?l and ind?l temperature ranges i cc (com?l): changed from 67 and 54 ma to 75 and 70 ma for 12 and 15 ns speed bins respectively i cc (ind?l): changed from 80, 67 and 54 ma to 90, 85 and 80 ma for 10, 12 and 15 ns speed bins respectively changed footnote # 10 on t r changed t sce from 8 to 7 ns for 10 ns speed bin added static discharge voltag e and latch-up current spec added v ih(max ) spec in footnote # 2 changed reference voltage level for measurement of hi-z parameters from 500 mv to 200 mv added write cycle (we controlled, oe high during write) timing diagram changed part names from z to zs in the ordering information table removed l-version added 10 ns parts in the ordering information table added lead-free ordering information shaded ordering information table *c 446328 see ecn nxr converted preliminary to final removed -15 speed bin removed commercial operating range product information added automotive operating range product information changed maximum rating for supply voltage from 7v to 6v updated thermal resistance table changed t hzwe from 6 ns to 5 ns updated footnote #8 on high-z parameter measurement updated the ordering information and replaced package name column with package diagram in the ordering information table [+] feedback [+] feedback
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